型号 功能描述 生产厂家 企业 LOGO 操作
VF30M120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:615.73 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

VishayVishay Siliconix

威世威世科技公司

Trench MOS Schottky technology

文件:92.17 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE SCHOTTKY 30A 120V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:615.73 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:615.73 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO

VishayVishay Siliconix

威世威世科技公司

Power Schottky rectifier

文件:167.64 Kbytes Page:8 Pages

STMICROELECTRONICS

意法半导体

Low forward voltage drop, low power losses

文件:144.59 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:105.26 Kbytes Page:4 Pages

VishayVishay Siliconix

威世威世科技公司

VF30M120C产品属性

  • 类型

    描述

  • 型号

    VF30M120C

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

更新时间:2026-1-1 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IC
2447
QFN
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SMC
24+
原装
8000
进口原装正品现货
SMC
2010
MODULE
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VALPEY
03+
SOJ4P
23
原装现货海量库存欢迎咨询
DXE
24+
TO-3
236
24+
DIP4
6430
原装现货/欢迎来电咨询
ICS
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SMC
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
Vishay Semiconductor Diodes Di
22+
ITO220AB
9000
原厂渠道,现货配单
HONEYWELL
24+
con
35960
查现货到京北通宇商城

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