Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

Trench MOS Schottky technology

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：615.73 Kbytes Page：4 Pages

封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE SCHOTTKY 30A 120V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：615.73 Kbytes Page：4 Pages

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

Trench MOS Schottky technology

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Dual High Voltage Trench MOS Barrier Schottky Rectifier

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