| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VBZE30N03 | MOSFET | VBSEMI 微碧半导体 |   | |
30V N-Channel Power Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances | UMW 友台半导体 | | ||
30V N-Channel Power General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on | EVVOSEMI 翊欧 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.01839 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
30A竊?0V N-CHANNEL MOSFET 文件：235.42 Kbytes Page：5 Pages | KIA 可易亚半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.0152 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBSEMI(台湾微碧) |
24+ |
TO-252 |
5000 |
场效应管大量原装现货 |
|||
VBsemi(台湾微碧) |
2447 |
TO-252 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
24+ |
N/A |
73000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
1500 |
原装现货 |
VBZE30N03芯片相关品牌
VBZE30N03规格书下载地址
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VBZE30N03数据表相关新闻
VC0703NLEB
VC0703NLEB CC2541F256RHAR TPA3118D2DAPR TPS71933-28DRVR
2023-5-25VBPW34VR
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VBE5415,TO-252,全新原装,门市自取或当天发货.
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2022-6-25VC7645
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2020-9-18
DdatasheetPDF页码索引
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