Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：163.22 Kbytes Page：5 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：158.28 Kbytes Page：5 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

Trench MOS Schottky technology

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：142.54 Kbytes Page：5 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：163.22 Kbytes Page：5 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：132.53 Kbytes Page：5 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：158.28 Kbytes Page：5 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：163.22 Kbytes Page：5 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：163.22 Kbytes Page：5 Pages

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30A 120V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：142.54 Kbytes Page：5 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：135.7 Kbytes Page：5 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：135.7 Kbytes Page：5 Pages

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：30A 120V TRENCH SKY RECT 分立半导体产品 二极管 - 整流器 - 阵列

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：142.54 Kbytes Page：5 Pages

4-BIT SINGLE CHIP MICROCOMPUTERS

OUTLINE OF CHARACTERISTICS The GMS300 series is a family of 4-bit, single chip CMOS microcomputer. Since it can form a system by one chip, it contributes to cost reduction and higher efficiency in system. Characteristics • Program memory : 512 bytes for GMS30004/012

30A, 1200V Hyperfast Diode

The RHRG30120 is a hyperfast diode with soft recovery characteristics (trr

30A, 1200V Hyperfast Diode

The RHRG30120 is a hyperfast diode with soft recovery characteristics (trr

30A, 1200V Hyperfast Diode

The RHRP30120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of s

30A, 1200V Ultrafast Diode

The RURP30120 is an ultrafast diode with soft recovery characteristic (trr Features • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . .