位置：首页 > IC中文资料第6041页 > V30120C
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
V30120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
V30120C | Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VishayVishay Siliconix 威世科技威世科技半导体 | | |
V30120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.54 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
V30120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.22 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
V30120C | Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：158.28 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Trench MOS Schottky technology Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.54 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.22 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：132.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：158.28 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.22 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.22 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30A 120V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.54 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：135.7 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：135.7 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：30A 120V TRENCH SKY RECT 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.54 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
PRODUCT SPECIFICATION Cable/Wire stripperss | JOKARI | | ||
Schottky PowerMod ● Schottky Barrier Rectifier ● Guard Ring Protection ● Common Cathode Center Tap ● 300 Amperes/45 Volts ● 125°C Junction Temperature ● Reverse Energy Tested ● VRRM 20 - 45 Volts ● ROHS Compliant | Microsemi 美高森美 | | ||
PRODUCT SPECIFICATION 文件：395.81 Kbytes Page：6 Pages | JOKARI | | ||
BNC FEEDTHROUGH CONNECTORS 文件：341.09 Kbytes Page：2 Pages | CLIFF | | ||
0.3 Inch Single Digit SMD Display 文件：240.28 Kbytes Page：7 Pages | CHINASEMI | |
V30120C产品属性
- 类型
描述
- 型号
V30120C
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
23+ |
TO-220 |
10500 |
原装元器件供应现货支持。咨询更多现货库存,支持样 |
|||
Vishay |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
VISHAY |
20+ |
TO220-3 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
VISHAY |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
Vishay(威世) |
2511 |
N/A |
11800 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
VISHAY/威世 |
ROHS/new original |
TO220-3 |
10500 |
原装元器件供应现货支持。咨询更多现货库存,支持样 |
|||
VISHAY/威世 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
|||
VISHAY/威世 |
23+ |
TO220 |
126000 |
渠道现货欢迎来询 |
|||
VISHAY |
21+ |
TO-220 |
3145 |
原装现货假一赔十 |
|||
VISHAY/威世 |
23+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
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V30120C规格书下载地址
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DdatasheetPDF页码索引
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