型号 功能描述 生产厂家 企业 LOGO 操作
V30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

VISHAYVishay Siliconix

威世威世科技公司

V30120C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

VISHAYVishay Siliconix

威世威世科技公司

V30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:142.54 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V30120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.22 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V30120C

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:158.28 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V30120C

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Schottky technology

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:142.54 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.22 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:132.53 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:158.28 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.22 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.22 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 30A 120V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:142.54 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:135.7 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:30A 120V TRENCH SKY RECT 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:135.7 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:142.54 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

PRODUCT SPECIFICATION

Cable/Wire stripperss

JOKARI

Schottky PowerMod

● Schottky Barrier Rectifier ● Guard Ring Protection ● Common Cathode Center Tap ● 300 Amperes/45 Volts ● 125°C Junction Temperature ● Reverse Energy Tested ● VRRM 20 - 45 Volts ● ROHS Compliant

MICROSEMI

美高森美

PRODUCT SPECIFICATION

文件:395.81 Kbytes Page:6 Pages

JOKARI

BNC FEEDTHROUGH CONNECTORS

文件:341.09 Kbytes Page:2 Pages

CLIFF

0.3 Inch Single Digit SMD Display

文件:240.28 Kbytes Page:7 Pages

CHINASEMI

V30120C产品属性

  • 类型

    描述

  • 型号

    V30120C

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier

更新时间:2026-3-9 22:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
12+
TO220-3
390
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY/威世
22+
100000
代理渠道/只做原装/可含税
VISHAY
23+
TO-220-3
50000
原装正品 支持实单
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
VISHAY
20+
TO220-3
38560
原装优势主营型号-可开原型号增税票
VISHAY
23+
TO-220
50000
全新原装正品现货,支持订货
VISHAY/威世
23+
TO220-3
10500
原装元器件供应现货支持。咨询更多现货库存,支持样
VISHAY/威世
12+
TO-220
939
VISHAY
18+
TO-220
85600
保证进口原装可开17%增值税发票
VISHAY/
24+
TO-220
5000
全新原装正品,现货销售

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