Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Low forward voltage drop, low power losses

文件：141.98 Kbytes Page：5 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 20A 120V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE SCHOTTKY 20A 120V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

Power Schottky rectifier

文件：187.7 Kbytes Page：8 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：598.1 Kbytes Page：4 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：612.2 Kbytes Page：4 Pages

Low forward voltage drop, low power losses

文件：141.98 Kbytes Page：5 Pages