Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

Low forward voltage drop, low power losses

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：DIODE SCHOTTKY 20A 120V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列

120 V power Schottky rectifier

Features • High current capability • Avalanche rated • Low forward voltage drop • High frequency operation • ECOPACK®2 compliant

120 V power Schottky rectifier

Features • High current capability • Avalanche rated • Low forward voltage drop • High frequency operation • ECOPACK®2 compliant

120 V power Schottky rectifier

Features • High current capability • Avalanche rated • Low forward voltage drop • High frequency operation • ECOPACK®2 compliant

120 V power Schottky rectifier

Features • High current capability • Avalanche rated • Low forward voltage drop • High frequency operation • ECOPACK®2 compliant

Power Schottky rectifier

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