Power Schottky rectifier

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封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：DIODE SCHOTTKY 120V 20A I2PAK 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-220-3 包装：散装 描述：DIODE SCHOTTKY 120V 20A TO220AB 分立半导体产品 二极管 - 整流器 - 单

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO

Low forward voltage drop, low power losses

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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