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V20100S价格
参考价格：￥3.2671
型号：V20100S-E3/4W 品牌：Vishay 备注：这里有V20100S多少钱，2026年最近7天走势，今日出价，今日竞价，V20100S批发/采购报价，V20100S行情走势销售排行榜，V20100S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V20100S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2 | VISHAYVishay Siliconix 威世威世科技公司 |   | |
V20100S | High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL | VISHAYVishay Siliconix 威世威世科技公司 | | |
V20100S | High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 | | |
V20100S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.71 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V20100S | High-Voltage Trench MOS Barrier Schottky Rectifier 文件：145.19 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JES | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A Trench MOS Schottky technology\n Low forward voltage drop, low power losses\n High efficiency operation\n\n ; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temp | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation; | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-22 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：145.19 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.71 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：152.41 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：129.03 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.71 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.71 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.77 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.99 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A 文件：159.2 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.77 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：156.99 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：146.07 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A 文件：159.2 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 100V 20A TO220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.77 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A 文件：159.2 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE SCHOTTKY 20A 100V TO-220AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：145.19 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：145.19 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：200.88 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier 文件：200.88 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：145.19 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
High-Voltage Trench MOS Barrier Schottky Rectifier 文件：145.19 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
SWITCHMODE??Power Rectifiers SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper | MOTOROLA 摩托罗拉 | | ||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the use of the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Package Designed for Power Surface Mount Applications • Center–T | MOTOROLA 摩托罗拉 | | ||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the use of the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Package Designed for Power Surface Mount Applications • Center–T | MOTOROLA 摩托罗拉 | | ||
SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the use of the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Package Designed for Power Surface Mount Applications • Center–T | MOTOROLA 摩托罗拉 | | ||
SWITCHMODE??Schottky Power Rectifirers
| MOTOROLA 摩托罗拉 | |
V20100S产品属性
- 类型
描述
- 型号
V20100S
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
24+ |
TO-263A |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY原装 |
25+23+ |
TO-220 |
23083 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY/威世 |
17+ |
TO-220AB |
466 |
||||
Vishay/GeneralSemiconduc |
24+ |
TO-220AB |
417 |
||||
VISHAY |
23+ |
TO-220 |
20000 |
原装正品,假一罚十 |
|||
VISHAY/威世 |
26+ |
SMD |
8635 |
一级代理优势现货,全新正品直营店 |
|||
VISHAY |
22+ |
TO-263AB |
20000 |
公司只做原装 品质保证 |
|||
VISHAY/威世 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VISHAY/威世 |
2450+ |
TO-220AB |
9850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY |
07+ |
TO-220 |
65 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
V20100S规格书下载地址
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V20100S数据表相关新闻
V23047-A1024-A511
V23047-A1024-A511
2023-4-7UZ1086G-SOT223R-AD-TG_UTC代理商
UZ1086G-SOT223R-AD-TG_UTC代理商
2023-3-14V23079D2001B301
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UXN40M7K
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2020-11-20V23079-A1006-B201
V23079-A1006-B201，全新原装当天发货或门市自取0755-82732291.
2019-8-31
DdatasheetPDF页码索引
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