High Voltage Trench MOS Barrier Schottky Rectifier

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High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-22

封装/外壳：TO-220-3 包装：管件 描述：DIODE SCHOTTKY 20A 100V TO-220AB 分立半导体产品 二极管 - 整流器 - 单

High Voltage Trench MOS Barrier Schottky Rectifier

文件：200.88 Kbytes Page：6 Pages

肖特基二极管与整流器 20A,100V,TRENCH SKY RECT.

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：145.19 Kbytes Page：5 Pages

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：145.19 Kbytes Page：5 Pages

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter