High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Ultra Low VF= 0.50 V at IF= 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temp

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：149.77 Kbytes Page：5 Pages

High Voltage Trench MOS Barrier Schottky Rectifier

文件：156.99 Kbytes Page：5 Pages

High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Trench MOS Schottky technology\n Low forward voltage drop, low power losses\n High efficiency operation\n\n ;

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

·Trench MOS Schottky technology\n·Low forward voltage drop, low power losses\n·High efficiency operation;

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

文件：159.2 Kbytes Page：5 Pages

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：149.77 Kbytes Page：5 Pages

High Voltage Trench MOS Barrier Schottky Rectifier

文件：156.99 Kbytes Page：5 Pages

High Voltage Trench MOS Barrier Schottky Rectifier

文件：146.07 Kbytes Page：5 Pages

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

文件：159.2 Kbytes Page：5 Pages

High-Voltage Trench MOS Barrier Schottky Rectifier

文件：149.77 Kbytes Page：5 Pages

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

文件：159.2 Kbytes Page：5 Pages

封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE SCHOTTKY 20A 100V TO-220AB 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-220-3 包装：带盒（TB） 描述：DIODE SCHOTTKY 20A 100V TO-220AB 分立半导体产品 二极管 - 整流器 - 单

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

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SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the use of the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Package Designed for Power Surface Mount Applications • Center–T

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE™ Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the use of the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Package Designed for Power Surface Mount Applications • Center–T

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