型号 功能描述 生产厂家 企业 LOGO 操作
V12P15

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

VishayVishay Siliconix

威世威世科技公司

V12P15

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件:106.3 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

V12P15

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at IF = 6 A

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件:78.91 Kbytes Page:5 Pages

VishayVishay Siliconix

威世威世科技公司

封装/外壳:TO-277,3-PowerDFN 包装:卷带(TR) 描述:DIODE SCHOTTKY 150V 12A TO277A 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

封装/外壳:TO-277,3-PowerDFN 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 150V 12A TO277A 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -150V, -12A, RDS(ON) = 0.24W @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -150V, -12A, RDS(ON) = 0.24W @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -150V, -12A, RDS(ON) = 0.24Ω @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

CET

华瑞

EUROLINE DC/DC-Converter

文件:90.6 Kbytes Page:2 Pages

RECOM

1 Watt SIP 7 Single & Dual Output

文件:106.91 Kbytes Page:3 Pages

RECOM

更新时间:2025-12-29 8:33:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
19+
TO-277A
200000
VISHAY
2022+PB
TO-277A
1500
VISHAY/威世
24+
NA/
4750
原装现货,当天可交货,原型号开票
VISHAY/威世
21+
2019PB
880000
明嘉莱只做原装正品现货
Vishay(威世)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
VISHAY/威世
22+
TO-277A
20000
只做原装
VISHAY/威世
2019+PB
TO-277A
1500
特价,大量供应
VISHAY/威世
23+
TO277A(SMPC)
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
VISHAY/威世
23+
TO-277A
50000
全新原装正品现货,支持订货

V12P15芯片相关品牌

V12P15数据表相关新闻