P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -150V, -12A, RDS(ON) = 0.24Ω @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -150V, -12A, RDS(ON) = 0.24W @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

P Channel MOSFET

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -150V, -12A, RDS(ON) = 0.24W @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

EUROLINE DC/DC-Converter

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1 Watt SIP 7 Single & Dual Output

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