High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.51 V at IF = 5 A

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified

Trench MOS Barrier Schottky Rectifier

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High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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封装/外壳：TO-277，3-PowerDFN 包装：管件 描述：DIODE GEN PURP 120V 10A TO277A 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 10A 120V TO-277A 分立半导体产品 二极管 - 整流器 - 单

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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Polyester Film Capacitors Metallized Radial Leads

Metallized Radial Leads DC Applications Miniature Size Type DME radial-leaded, mini-dipped capacitors deliver virtually the same performance of other capacitors physically twice as big. Improvements in flm technology permit the use of thinner dielectric. Type DME self heals shorts caused by over

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -10A@ TC=25℃ ·Drain Source Voltage -VDSS= -120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

P-Channel Enhancement - Mode Power Field-Effect Transistors Features: ■ SOA is power-dissipation limited ■ Nanoseconde switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

P-Channel Enhancement - Mode Power Field-Effect Transistors Features: ■ SOA is power-dissipation limited ■ Nanoseconde switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

Type DME Polyester Film Capacitors

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