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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
V10P12 | HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •AEC-Q101qualified | VishayVishay Siliconix 威世科技 |  |   |
V10P12 | HighCurrentDensitySurface-MountTMBS짰(TrenchMOSBarrierSchottky)Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable - | VishayVishay Siliconix 威世科技 | | |
V10P12 | HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier 文件：109.22 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | |
HighCurrentDensitySurface-MountTMBS짰(TrenchMOSBarrierSchottky)Rectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable - | VishayVishay Siliconix 威世科技 | | | |
HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •AEC-Q101qualified | VishayVishay Siliconix 威世科技 | | | |
HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •AEC-Q101qualified | VishayVishay Siliconix 威世科技 | | | |
HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •AEC-Q101qualified | VishayVishay Siliconix 威世科技 | | | |
HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier FEATURES •Verylowprofile-typicalheightof1.1mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •AEC-Q101qualified | VishayVishay Siliconix 威世科技 | | | |
TrenchMOSBarrierSchottkyRectifier 文件：711.53 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | | |
HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier 文件：84.46 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | | |
封装/外壳：TO-277，3-PowerDFN 包装：管件 描述：DIODE GEN PURP 120V 10A TO277A 分立半导体产品 二极管 - 整流器 - 单 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division |  | | |
封装/外壳：TO-277，3-PowerDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 10A 120V TO-277A 分立半导体产品 二极管 - 整流器 - 单 | Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division | | | |
HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier 文件：109.22 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | | |
PolyesterFilmCapacitorsMetallizedRadialLeads MetallizedRadialLeads DCApplicationsMiniatureSize TypeDMEradial-leaded,mini-dippedcapacitorsdelivervirtuallythesameperformanceofothercapacitorsphysicallytwiceasbig.Improvementsinflmtechnologypermittheuseofthinnerdielectric.TypeDMEselfhealsshortscausedbyover | CDE Cornell Dubilier Electronics |  | | |
P-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS P-ChannelEnhancement-ModePowerField-EffectTransistors Features: ■SOAispower-dissipationlimited ■Nanosecondeswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESSGE Solid State GE Solid State |  | | |
P-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS P-ChannelEnhancement-ModePowerField-EffectTransistors Features: ■SOAispower-dissipationlimited ■Nanosecondeswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESSGE Solid State GE Solid State | | | |
TypeDMEPolyesterFilmCapacitors 文件：493.26 Kbytes Page：4 Pages | CDE Cornell Dubilier Electronics | | |
V10P12产品属性
- 类型
描述
- 型号
V10P12
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
2023+ |
TO-277A(SMPC) |
7695 |
全新原厂原装产品、公司现货销售 |
|||
Vishay |
23+ |
二极管 |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
VISHAY |
2002 |
TO-277A (SMPC) |
65000 |
原装正品假一罚万 |
|||
VISHAY/威世 |
TO277A(SMPC) |
7906200 |
|||||
VISHAY |
21+ |
TO-277A(SMPC) |
6000 |
绝对原裝现货 |
|||
VISHAY/威世 |
23+ |
TO-277A(SMPC) |
45000 |
热卖优势现货 |
|||
VISHAY |
22+ |
TO-277A(SMPC) |
28000 |
原装现货假一赔十 |
|||
Vishay(威世) |
2249+ |
TO-277,3-PowerDFN |
62638 |
二十余载金牌老企 研究所优秀合供单位 您的原厂窗口 |
|||
VISHAY/威世 |
2019+PB |
TO-277A(SMPC) |
10300 |
原装正品 可含税交易 |
|||
VISHAY/威世 |
23+ |
NA/ |
7750 |
原装现货,当天可交货,原型号开票 |
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V10P12数据表相关新闻
V23047-A1024-A511
V23047-A1024-A511
2023-4-7UZ1086G-SOT223R-AD-TG_UTC代理商
UZ1086G-SOT223R-AD-TG_UTC代理商
2023-3-14UXN40M7K
UXN40M7K
2021-10-20UXN40M7K
UXN40M7K
2021-10-20V15PM15-M3/H
V15PM15-M3/H
2020-11-20V23079-A1006-B201
V23079-A1006-B201，全新原装当天发货或门市自取0755-82732291.
2019-8-31
DdatasheetPDF页码索引
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