位置：首页 > IC中文资料第12840页 > UTT60N06
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UTT60N06 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：366.56 Kbytes Page：8 Pages | UTC 友顺 |   | |
UTT60N06 | Trench Power MOSFET (N-CH) | UTC 友顺 | | |
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：386.47 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：386.47 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：366.56 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：386.47 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：386.47 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：386.47 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：386.47 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：366.56 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：386.47 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：386.47 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：386.47 Kbytes Page：8 Pages | UTC 友顺 | | ||
TMOS POWER FET 60 AMPERES 60 VOLTS HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components wit | MOTOROLA 摩托罗拉 | | ||
TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies | MOTOROLA 摩托罗拉 | | ||
TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies | MOTOROLA 摩托罗拉 | | ||
TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP60N06LT is su | PHILIPS 飞利浦 | | ||
TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a | PHILIPS 飞利浦 | |
UTT60N06产品属性
- 类型
描述
- 型号
UTT60N06
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
22+ |
TO-252 |
20000 |
只做原装 |
|||
UTC/友顺 |
新年份 |
TO-252 |
33288 |
原装正品现货,实单带TP来谈! |
|||
UTC/友顺 |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
|||
UTC |
20+ |
TO-252 |
63258 |
原装优势主营型号-可开原型号增税票 |
|||
UTC/友顺 |
2022+ |
TO-220 |
32500 |
原厂代理 终端免费提供样品 |
|||
NK/南科功率 |
2025+ |
TO-252-L |
986966 |
国产 |
|||
UTC/友顺 |
24+ |
TO-252 |
60000 |
||||
UTC/友顺 |
23+ |
TO-263 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
UTC |
25+ |
TO-252 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
UTC/友顺 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
UTT60N06规格书下载地址
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2020-12-16UUR1H220MCL1GS61092 原装现货厂商：Nichicon/尼吉康16+封装：6.3X5.8
UUR1H220MCL1GS 61092 Nichicon/尼吉康 16+ 6.3X5.8
2019-9-11
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