Trench Power MOSFET  (N-CH)

The UTC UTT60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed and low thermal resistance. usually used at telecom and computer applications. • RDS(ON) = 18mΩ @VGS = 10 V \n• Fast switching capability \n• Avalanche energy Specified;

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE MOSFET

文件：386.47 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：386.47 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：366.56 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：386.47 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：386.47 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：386.47 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：386.47 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：366.56 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：386.47 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：386.47 Kbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：386.47 Kbytes Page：8 Pages

TMOS POWER FET 60 AMPERES 60 VOLTS

HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components wit

TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies

TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM

This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP60N06LT is su

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a