120A, 60V P-CHANNEL POWER MOSFET

The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche.The UTC UTT120P06 is suitable for low voltage and high speed switching applications • RDS(ON) • ≤• 6.9m• Ω• @ VGS=-10V, ID=-30A\n• High Switching Speed;

120A, 60V P-CHANNEL POWER MOSFET

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P-CHANNEL POWER MOSFET

文件：165.5 Kbytes Page：3 Pages

P-CHANNEL POWER MOSFET

文件：165.5 Kbytes Page：3 Pages

120A, 60V P-CHANNEL POWER MOSFET

文件：131.27 Kbytes Page：3 Pages

P-CHANNEL POWER MOSFET

文件：165.5 Kbytes Page：3 Pages

P-CHANNEL POWER MOSFET

文件：165.5 Kbytes Page：3 Pages

P-CHANNEL POWER MOSFET

文件：165.5 Kbytes Page：3 Pages

120A, 60V P-CHANNEL POWER MOSFET

文件：131.27 Kbytes Page：3 Pages

P-CHANNEL POWER MOSFET

文件：165.5 Kbytes Page：3 Pages

P-CHANNEL POWER MOSFET

文件：165.5 Kbytes Page：3 Pages

High Frequency Rectification

Construction: Schottky Barrier Diode Application : High Frequency Rectification

丝印代码：G120P06；P-Channel Enhancement Mode Power MOSFET

Description The G120P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

丝印代码：G120P06；P-Channel Enhancement Mode Power MOSFET

Description The G120P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters