| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
C120P06QE | High Frequency Rectification Construction: Schottky Barrier Diode Application : High Frequency Rectification | NIEC |   | |
C120P06QE | High Frequency Rectification | NIEC | | |
P-Channel Enhancement Mode Power MOSFET Description The G120P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
P-Channel Enhancement Mode Power MOSFET Description The G120P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
120A, 60V P-CHANNEL POWER MOSFET 文件：131.27 Kbytes Page：3 Pages | UTC 友顺 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
OKI |
23+ |
N/A |
9526 |
||||
OKI |
2450+ |
SOP |
6540 |
只做原装正品现货!或订货假一赔十! |
|||
JXK/杰信科 |
23+ |
TO-92 |
999999 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
OKI |
24+ |
SOP |
90000 |
进口原装现货假一罚十价格合理 |
|||
M-TEK |
22+ |
12PIN THT |
8000 |
原装正品支持实单 |
|||
SAMSUNG/三星 |
25+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
OKI |
2023+ |
SOP |
50000 |
原装现货 |
|||
PANDUIT |
6 |
||||||
PANDUIT |
24+ |
con |
6 |
现货常备产品原装可到京北通宇商城查价格 |
|||
TOKMAS |
2447 |
TO-247 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
C120P06QE芯片相关品牌
C120P06QE规格书下载地址
C120P06QE参数引脚图相关
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製造商: KEMET 產品類型: 多層陶瓷電容器MLCC - SMD/SMT RoHS: 詳細資料 終端: Standard 電容: 0.047 uF 直流電額定電壓: 50 VDC 電介質: X7R 耐受性: 20 %_ 外殼代碼 - in: 1206 外殼代碼 - mm: 3216 高度: 0.78 mm 最低工作溫度: - 55 C 最高工作溫度: + 125 C 產品: General Type MLCCs 終
2019-11-19
DdatasheetPDF页码索引
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