| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
G120P06T | P-Channel Enhancement Mode Power MOSFET Description The G120P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 |   | |
G120P06T | Trench Mosfet | GOFORD 谷峰半导体 | | |
P-Channel Enhancement Mode Power MOSFET Description The G120P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
High Frequency Rectification Construction: Schottky Barrier Diode Application : High Frequency Rectification | NIEC | | ||
120A, 60V P-CHANNEL POWER MOSFET 文件：131.27 Kbytes Page：3 Pages | UTC 友顺 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GMT |
25+ |
SOT23-5 |
2000 |
原装正品,假一罚十! |
|||
SOT-153 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
ST |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
GMT |
24+ |
SOT23-5 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
GMT/致新 |
24+ |
SOT23-5 |
30000 |
原装现货 |
|||
GMT/致新 |
2450+ |
SOT23-5 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
GMT |
25+23+ |
SOT23-5 |
42878 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
GMT |
24+ |
SOT-153SOT-23-5 |
11200 |
新进库存/原装 |
|||
GMT/致新 |
2402+ |
SOP-8 |
8324 |
原装正品!实单价优! |
|||
ST/意法 |
2023+ |
MODULE |
552 |
主打螺丝模块系列 |
G120P06T规格书下载地址
G120P06T参数引脚图相关
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2019-4-16
DdatasheetPDF页码索引
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