P-Channel 30-V (D-S) MOSFET

文件：1.6876 Mbytes Page：8 Pages

P-CHANNEL ENHANCEMENT MODE

文件：140.1 Kbytes Page：4 Pages

P-CHANNEL ENHANCEMENT MODE

文件：248.33 Kbytes Page：4 Pages

P-CHANNEL ENHANCEMENT MODE

文件：248.33 Kbytes Page：4 Pages

丝印代码：35HZG；P-CHANNEL ENHANCEMENT MODE

文件：248.33 Kbytes Page：4 Pages

丝印代码：35HZG；P-CHANNEL ENHANCEMENT MODE

文件：248.33 Kbytes Page：4 Pages

P-CHANNEL ENHANCEMENT MODE

文件：248.33 Kbytes Page：4 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.68767 Mbytes Page：8 Pages

P-Channel MOSFET uses advanced trench technology

文件：1.47655 Mbytes Page：5 Pages

P-CHANNEL ENHANCEMENT MODE

文件：140.1 Kbytes Page：4 Pages

P-CHANNEL ENHANCEMENT MODE

文件：140.1 Kbytes Page：4 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.68708 Mbytes Page：8 Pages

P-CHANNEL ENHANCEMENT MODE

文件：140.1 Kbytes Page：4 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.68714 Mbytes Page：8 Pages

P-CHANNEL ENHANCEMENT MODE

文件：140.1 Kbytes Page：4 Pages

P-Channel Enhancement Mode MOSFET

Single P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features · –5.3 A, –30 V RDS(ON) = 50

Bipolar Power Transistors

Bipolar Power Transistors PNP Silicon • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Sat

Single P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –5.3 A, –30 V RDS(ON) = 50 mΩ @ VGS

P-Channel Logic Level PowerTrench MOSFET

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