General Purpose ESD Protection

Description This TVS diode is fabricated in a proprietary silicon avalanche technology that offers each I/O pin a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust TVS diodes can safely absorb repetitive ESD strikes

AQ1003-01LTG, 30pF 30kV Unidirectional Discrete TVS

Description This discrete TVS diode is fabricated in a proprietary silicon avalanche technology that protects electronic equipment I/O pins from destructive electrostatic discharges (ESDs). These robust TVSs can withstand repetitive contact or air ESD discharge events at ± 30 kV levels withou

1-Line Uni-directional TVS Diode

Features © Low operating voltage: 24v ® Ultra low capacitance: SOpF Max ® Ultra low leakage: nA level © Low clamping voltage ® 2-pin leadless package ® Complies with following standards: © - IEC 61000-4-2 (ESD) immunity test Air discharge: £30kV/ Contact discharge: £30kV — IEC61000-4-5 (

30pF 30kV Unidirectional Discrete TVS

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Silicon Protection Arrays

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