Description

This discrete TVS diode is fabricated in a proprietary silicon

avalanche technology that protects electronic equipment

I/O pins from destructive electrostatic discharges (ESDs).

These robust TVSs can withstand repetitive contact or air

ESD discharge events at ± 30 kV levels without suffering

any performance degradation. This exceeds the ESD

contact and air discharge test requirements of IEC 61000-

4-2. Additionally, the TVS can withstand an 8/20 surge

current event as defined in IEC 61000-4-5 2nd Edition up to

7A and still provide low voltage clamping levels.

Features

• ESD, IEC 61000-4-2,

±30kV contact, ±30kV air

• EFT, IEC 61000-4-4, 40A

(5/50ns)

• Lightning, 7A (8/20μs as

defined in IEC 61000-4-5

2nd Edition)

• Low leakage current of

100nA (MAX) at 5V

• PPAP capable

• AEC-Q101 qualified

• Moisture Sensitivity Level

(MSL -1)

• Halogen free, Lead free

and RoHS compliant

• ESD, ISO 10605, 330pF

330Ω, ±25kV contact,

±30kV air

Applications

• Mobile phones

• Smart phones

• PDAs

• Portable navigation

components

• Digital cameras

• Portable medical

components

• Automotive applications