Description

This TVS diode is fabricated in a proprietary silicon

avalanche technology that offers each I/O pin a high

level of protection for electronic equipment that may

experience destructive electrostatic discharges (ESD). These

robust TVS diodes can safely absorb repetitive ESD strikes at

±30kV (contact discharge, IEC 61000-4-2) without performance

degradation. Additionally, the TVS diode can safely dissipate 7A of

8/20μs surge current (IEC 61000-4-5 2nd Edition) with very low

clamping voltages.

Features

■ ESD, IEC 61000-4-2, ±30kV

contact, ±30kV air

■ EFT, IEC 61000-4-4, 40A

(5/50ns)

■ Lightning, 7A (8/20μs as

defined in IEC 61000-4-5 2nd

edition)

■ Low leakage current of 100nA

(MAX) at 5V

■ PPAP Capable

■ Small SOD882 (JEDEC MO-

236) package saves board

space

■ Fits solder footprint of

industry standard 0402 (1005)

components

■ AEC-Q101 qualified

■ Halogen free, Lead free and

RoHS compliant

■ Moisture Sensitivity

Level(MSL -1)

■ ESD, ISO 10605, 330pF

330Ω, ±29kV contact, ±30kV

air

Applications

■ Mobile phones

■ Smart phones

■ PDAs

■ Portable navigation

components

■ Digital cameras

■ Portable medical components

■ Automotive applications