NECs POWER AMPLIFIER FOR BLUETOOH CLASS 1

[CEL] DESCRIPTION NECs µPG2301TQ is a GaAs HBT MMIC for power amplifier for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in a low profile 10-pin plastic TSON package. FEATURES • OPERATION FREQUENCY fopt

GaAs HBT INTEGRATED CIRCUIT

FEATURES • Operation frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) • Supply voltage : VCC1, 2 = Vbias = 2.7 to 3.6 V (3.3 V TYP.) • Control voltage : Vcont = 0 to 3.6 V (2.5 V TYP.) : Venable = 0 to 3.1 V (2.9 V TYP.) • Circuit current : ICC = 120 mA TYP.@ VCC1, 2 = Vbias = 3.3 V, Vc

NECs POWER AMPLIFIER FOR BLUETOOH CLASS 1

GaAs HBT INTEGRATED CIRCUIT

FEATURES • Operation frequency : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) • Supply voltage : VCC1, 2 = Vbias = 2.7 to 3.6 V (3.3 V TYP.) • Control voltage : Vcont = 0 to 3.6 V (2.5 V TYP.) : Venable = 0 to 3.1 V (2.9 V TYP.) • Circuit current : ICC = 120 mA TYP.@ VCC1, 2 = Vbias = 3.3 V, Vc

Vibrating level switch

The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt

1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

SOT-23 Plastic-Encapsulate MOSFETS

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-2.8A竊?20V P-CHANNEL MOSFET

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10V P-Channel Enhanced MOS FET

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