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DESCRIPTION

NECs µPG2301TQ is a GaAs HBT MMIC for power amplifier for Bluetooth Class 1.

This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in a low profile 10-pin plastic TSON package.

FEATURES

• OPERATION FREQUENCY

fopt = 2,400 to 2,500 MHz (2 450 MHz TYP.)

• SUPPLY VOLTAGE

VCC1, 2 = Vbias = 2.7 to 3.6 V (3.3 V TYP.)

• CONTROL VOLTAGE

Vcont = 0 to 3.6 V (2.5 V TYP.)

Venable = 0 to 3.1 V (2.9 V TYP.)

• CIRCUIT CURRENT

ICC = 120 mA TYP.@ VCC1, 2 = Vbias = 3.3 V, Vcont = 2.5 V,

Venable = 2.9 V, Pin = +4 dBm

• MAXIMUM POWER

Pout(MAX.) = +23 dBm TYP.@ VCC1, 2 = Vbias = 3.3 V,

Vcont = 2.5 V, Venable = 2.9 V, Pin = +4 dBm

• GAIN CONTROL RANGE

GCR = 23 dB TYP.@ VCC1, 2 = Vbias = 3.3 V,

Vcont = 0 to 2.5 V, Venable = 2.9 V, Pin = +4 dBm

• POWER GAIN

GP = 23 dB TYP.(Reference value)

• HIGH EFFICIENCY

PAE = 50 TYP.(Reference value)

• SHUT DOWN FUNCTION

• HIGH-DENSITY SURFACE MOUNTING

10 pin plastic TSON package (2.4 × 2.55 × 0.6 mm)

APPLICATION

• POWER AMPLIFIER FOR BLUETOOTH CLASS 1

• WIRELESS LAN