MOS INTEGRATED CIRCUIT

FEATURES · Low EMI noise model · Large on-chip ROM & RAM · External memory expansion space : 64K bytes · Instruction execution time can be varied from high-speed (0.4 ms) to ultra-low-speed (122 ms) · I/O ports: 53 (N-ch open-drain : 4) · 8-bit resolution A/D converter : 8 channels · Serial

MOS INTEGRATED CIRCUIT

· External memory expansion space: 64K bytes · Minimum instruction execution time can be varied from high-speed (0.4 ms) to ultra-low-speed (122 ms) · I/O ports: 53 (N-ch open-drain: 4) · 8-bit resolution A/D converter: 8 channels · Serial interface: 2 channels · Timer: 5 channels · Supply v

MOS INTEGRATED CIRCUIT

FEATURES · Serial interface : 2 channels (I2C bus mode : 1 channel) · Large on-chip ROM & RAM · External memory expansion space : 64K bytes · Minimum instruction execution time can be varied from high-speed (0.4 ms) to ultra-low-speed (122 ms) · I/O ports: 53 (N-ch open-drain : 4) · 8-bit re

THREE TERMINAL POSITIVE VOLTAGE REGULATORS

Features - Suitable for C-MOS, TTL, the other Digital IC's Power Supply - Internal Thermal Overload Protection - Internal Short Circuit Current Limiting - Output Current in excess of 1A

Hybrid architecture - separate GSM, WCDMA paths

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