型号 功能描述 生产厂家 企业 LOGO 操作
UPD78013FY

MOS INTEGRATED CIRCUIT

FEATURES · Serial interface : 2 channels (I2C bus mode : 1 channel) · Large on-chip ROM & RAM · External memory expansion space : 64K bytes · Minimum instruction execution time can be varied from high-speed (0.4 ms) to ultra-low-speed (122 ms) · I/O ports: 53 (N-ch open-drain : 4) · 8-bit re

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

· External memory expansion space: 64K bytes · Minimum instruction execution time can be varied from high-speed (0.4 ms) to ultra-low-speed (122 ms) · I/O ports: 53 (N-ch open-drain: 4) · 8-bit resolution A/D converter: 8 channels · Serial interface: 2 channels · Timer: 5 channels · Supply v

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES · Low EMI noise model · Large on-chip ROM & RAM · External memory expansion space : 64K bytes · Instruction execution time can be varied from high-speed (0.4 ms) to ultra-low-speed (122 ms) · I/O ports: 53 (N-ch open-drain : 4) · 8-bit resolution A/D converter : 8 channels · Serial

RENESAS

瑞萨

THREE TERMINAL POSITIVE VOLTAGE REGULATORS

Features - Suitable for C-MOS, TTL, the other Digital IC's Power Supply - Internal Thermal Overload Protection - Internal Short Circuit Current Limiting - Output Current in excess of 1A

TOSHIBA

东芝

Hybrid architecture - separate GSM, WCDMA paths

文件:89.1 Kbytes Page:2 Pages

SKYWORKS

思佳讯

更新时间:2026-3-16 11:56:00
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