型号 功能描述 生产厂家 企业 LOGO 操作
UPD75006

4-BIT SINGLE-CHIP MICROCOMPUTER

DESCRIPTION The µPD75008 is one of the 75X Series 4-bit single-chip microcomputer. In addition to high-speed operation with 0.95 µs minimum instruction execution time for the CPU, the µPD75008 employs a serial bus interface with standard NEC format, the µPD75004 is a powerful product with a high

NEC

瑞萨

UPD75006

4-BIT SINGLE-CHIP MICROCOMPUTER

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

RENESAS

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLERS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLERS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLERS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

RENESAS

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLERS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLERS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

RENESAS

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLERS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLERS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

RENESAS

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLERS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLERS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

RENESAS

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLERS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLERS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

RENESAS

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLERS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLERS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

RENESAS

瑞萨

4-BIT SINGLE-CHIP MICROCOMPUTER

DESCRIPTION The µPD75008 is one of the 75X Series 4-bit single-chip microcomputer. In addition to high-speed operation with 0.95 µs minimum instruction execution time for the CPU, the µPD75008 employs a serial bus interface with standard NEC format, the µPD75004 is a powerful product with a high

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES · Capable of high-speed operation and variable instruction execution time to power save • 0.95 ms, 1.91 ms, 15.3 ms (Main system clock: operating at 4.19 MHz) • 122 ms (Subsystem clock: operating at 32.768 kHz) · 75X architecture comparable to that for an 8-bit microcomputer is employ

RENESAS

瑞萨

4-BIT SINGLE-CHIP MICROCOMPUTER

DESCRIPTION The µPD75008 is one of the 75X Series 4-bit single-chip microcomputer. In addition to high-speed operation with 0.95 µs minimum instruction execution time for the CPU, the µPD75008 employs a serial bus interface with standard NEC format, the µPD75004 is a powerful product with a high

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES · Capable of high-speed operation and variable instruction execution time to power save • 0.95 ms, 1.91 ms, 15.3 ms (Main system clock: operating at 4.19 MHz) • 122 ms (Subsystem clock: operating at 32.768 kHz) · 75X architecture comparable to that for an 8-bit microcomputer is employ

RENESAS

瑞萨

4 BIT SINGLE CHIP CMOS MICROCOMPUTERS

RENESAS

瑞萨

CLEANROOM BOOTIE

Description Desco ESD Cleanroom Booties are designed to be worn by personnel grounded via a Flooring/Footwear System per ANSI/ESD S20.20. “ESD protective flooring, used with approved footwear, may be used as an alternative to the wrist strap system for standing operations.” [ANSI/ESD S20.20 sect

Desco

1-pole/2-pole 16A polarized power relays Variety of contact arrangements

FEATURES 1. Variety of contact arrangements Wide lineup of 1 Form C, 1 Form A, 1 Form B, 2 Form C, 2 Form A, 2 Form B, 1 Form A 1 Form B. 2. Latching operation Latching via a polarized magnetic circuit structure allows remote operation and lower energy consumption 3. Compact with high c

Panasonic

松下

UPD75006产品属性

  • 类型

    描述

  • 型号

    UPD75006

  • 制造商

    Renesas Electronics Corporation

更新时间:2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
3513
原厂直销,现货供应,账期支持!
NEC
2016+
DIP42
9000
只做原装,假一罚十,公司可开17%增值税发票!
NEC
23+
QFP44
20000
全新原装假一赔十
NEC
25+
QFP
54648
百分百原装现货 实单必成 欢迎询价
NEC
24+
QFP
990000
明嘉莱只做原装正品现货
NEC
24+
DIP40
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
NEC
24+
SOP
15300
公司常备大量原装现货,可开13%增票!
NEC
24+
QFP-64
8540
只做原装正品现货或订货假一赔十!
NEC
DIP42
125000
一级代理原装正品,价格优势,长期供应!
NEC
23+
QFP/44
7000
绝对全新原装!100%保质量特价!请放心订购!

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