型号 功能描述 生产厂家&企业 LOGO 操作
UPD75006

4-BITSINGLE-CHIPMICROCOMPUTER

DESCRIPTION TheµPD75008isoneofthe75XSeries4-bitsingle-chipmicrocomputer. Inadditiontohigh-speedoperationwith0.95µsminimuminstructionexecutiontimefortheCPU,theµPD75008employsaserialbusinterfacewithstandardNECformat,theµPD75004isapowerfulproductwithahigh

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

4-BITSINGLE-CHIPMICROCONTROLLERS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

MOSINTEGRATEDCIRCUIT

Features OLow-voltageoperation:VDD=1.8to5.5V OOn-chipmemory •Programmemory(ROM): 4096×8bits(μPD750064,750064(A)) 6144×8bits(μPD750066,750066(A)) 8192×8bits(μPD750068,750068(A)) •Datamemory(RAM): 512×4bits

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4-BITSINGLE-CHIPMICROCONTROLLERS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

4-BITSINGLE-CHIPMICROCONTROLLERS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

MOSINTEGRATEDCIRCUIT

Features OLow-voltageoperation:VDD=1.8to5.5V OOn-chipmemory •Programmemory(ROM): 4096×8bits(μPD750064,750064(A)) 6144×8bits(μPD750066,750066(A)) 8192×8bits(μPD750068,750068(A)) •Datamemory(RAM): 512×4bits

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features OLow-voltageoperation:VDD=1.8to5.5V OOn-chipmemory •Programmemory(ROM): 4096×8bits(μPD750064,750064(A)) 6144×8bits(μPD750066,750066(A)) 8192×8bits(μPD750068,750068(A)) •Datamemory(RAM): 512×4bits

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4-BITSINGLE-CHIPMICROCONTROLLERS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

4-BITSINGLE-CHIPMICROCONTROLLERS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

MOSINTEGRATEDCIRCUIT

Features OLow-voltageoperation:VDD=1.8to5.5V OOn-chipmemory •Programmemory(ROM): 4096×8bits(μPD750064,750064(A)) 6144×8bits(μPD750066,750066(A)) 8192×8bits(μPD750068,750068(A)) •Datamemory(RAM): 512×4bits

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features OLow-voltageoperation:VDD=1.8to5.5V OOn-chipmemory •Programmemory(ROM): 4096×8bits(μPD750064,750064(A)) 6144×8bits(μPD750066,750066(A)) 8192×8bits(μPD750068,750068(A)) •Datamemory(RAM): 512×4bits

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features OLow-voltageoperation:VDD=1.8to5.5V OOn-chipmemory •Programmemory(ROM): 4096×8bits(μPD750064,750064(A)) 6144×8bits(μPD750066,750066(A)) 8192×8bits(μPD750068,750068(A)) •Datamemory(RAM): 512×4bits

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4-BITSINGLE-CHIPMICROCONTROLLERS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

4-BITSINGLE-CHIPMICROCONTROLLERS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

MOSINTEGRATEDCIRCUIT

Features OLow-voltageoperation:VDD=1.8to5.5V OOn-chipmemory •Programmemory(ROM): 4096×8bits(μPD750064,750064(A)) 6144×8bits(μPD750066,750066(A)) 8192×8bits(μPD750068,750068(A)) •Datamemory(RAM): 512×4bits

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features OLow-voltageoperation:VDD=1.8to5.5V OOn-chipmemory •Programmemory(ROM): 4096×8bits(μPD750064,750064(A)) 6144×8bits(μPD750066,750066(A)) 8192×8bits(μPD750068,750068(A)) •Datamemory(RAM): 512×4bits

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4-BITSINGLE-CHIPMICROCONTROLLERS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

4-BITSINGLE-CHIPMICROCONTROLLERS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

MOSINTEGRATEDCIRCUIT

Features OLow-voltageoperation:VDD=1.8to5.5V OOn-chipmemory •Programmemory(ROM): 4096×8bits(μPD750064,750064(A)) 6144×8bits(μPD750066,750066(A)) 8192×8bits(μPD750068,750068(A)) •Datamemory(RAM): 512×4bits

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features OLow-voltageoperation:VDD=1.8to5.5V OOn-chipmemory •Programmemory(ROM): 4096×8bits(μPD750064,750064(A)) 6144×8bits(μPD750066,750066(A)) 8192×8bits(μPD750068,750068(A)) •Datamemory(RAM): 512×4bits

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features OLow-voltageoperation:VDD=1.8to5.5V OOn-chipmemory •Programmemory(ROM): 4096×8bits(μPD750064,750064(A)) 6144×8bits(μPD750066,750066(A)) 8192×8bits(μPD750068,750068(A)) •Datamemory(RAM): 512×4bits

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4-BITSINGLE-CHIPMICROCONTROLLERS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

4-BITSINGLE-CHIPMICROCONTROLLERS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

MOSINTEGRATEDCIRCUIT

Features OLow-voltageoperation:VDD=1.8to5.5V OOn-chipmemory •Programmemory(ROM): 4096×8bits(μPD750064,750064(A)) 6144×8bits(μPD750066,750066(A)) 8192×8bits(μPD750068,750068(A)) •Datamemory(RAM): 512×4bits

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features OLow-voltageoperation:VDD=1.8to5.5V OOn-chipmemory •Programmemory(ROM): 4096×8bits(μPD750064,750064(A)) 6144×8bits(μPD750066,750066(A)) 8192×8bits(μPD750068,750068(A)) •Datamemory(RAM): 512×4bits

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4-BITSINGLE-CHIPMICROCONTROLLERS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

4-BITSINGLE-CHIPMICROCONTROLLERS

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

MOSINTEGRATEDCIRCUIT

Features OLow-voltageoperation:VDD=1.8to5.5V OOn-chipmemory •Programmemory(ROM): 4096×8bits(μPD750064,750064(A)) 6144×8bits(μPD750066,750066(A)) 8192×8bits(μPD750068,750068(A)) •Datamemory(RAM): 512×4bits

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features OLow-voltageoperation:VDD=1.8to5.5V OOn-chipmemory •Programmemory(ROM): 4096×8bits(μPD750064,750064(A)) 6144×8bits(μPD750066,750066(A)) 8192×8bits(μPD750068,750068(A)) •Datamemory(RAM): 512×4bits

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4-BITSINGLE-CHIPMICROCOMPUTER

DESCRIPTION TheµPD75008isoneofthe75XSeries4-bitsingle-chipmicrocomputer. Inadditiontohigh-speedoperationwith0.95µsminimuminstructionexecutiontimefortheCPU,theµPD75008employsaserialbusinterfacewithstandardNECformat,theµPD75004isapowerfulproductwithahigh

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

MOSINTEGRATEDCIRCUIT

FEATURES ·Capableofhigh-speedoperationandvariableinstructionexecutiontimetopowersave •0.95ms,1.91ms,15.3ms(Mainsystemclock:operatingat4.19MHz) •122ms(Subsystemclock:operatingat32.768kHz) ·75Xarchitecturecomparabletothatforan8-bitmicrocomputerisemploy

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

4-BITSINGLE-CHIPMICROCOMPUTER

DESCRIPTION TheµPD75008isoneofthe75XSeries4-bitsingle-chipmicrocomputer. Inadditiontohigh-speedoperationwith0.95µsminimuminstructionexecutiontimefortheCPU,theµPD75008employsaserialbusinterfacewithstandardNECformat,theµPD75004isapowerfulproductwithahigh

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

MOSINTEGRATEDCIRCUIT

FEATURES ·Capableofhigh-speedoperationandvariableinstructionexecutiontimetopowersave •0.95ms,1.91ms,15.3ms(Mainsystemclock:operatingat4.19MHz) •122ms(Subsystemclock:operatingat32.768kHz) ·75Xarchitecturecomparabletothatforan8-bitmicrocomputerisemploy

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

1-pole/2-pole16ApolarizedpowerrelaysVarietyofcontactarrangements

FEATURES 1.Varietyofcontactarrangements Widelineupof1FormC,1FormA,1FormB,2FormC,2FormA,2FormB,1FormA1FormB. 2.Latchingoperation Latchingviaapolarizedmagneticcircuitstructureallowsremoteoperationandlowerenergyconsumption 3.Compactwithhighc

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

UPD75006产品属性

  • 类型

    描述

  • 型号

    UPD75006

  • 制造商

    Renesas Electronics Corporation

更新时间:2025-5-18 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
3513
原厂直销,现货供应,账期支持!
NEC
2016+
DIP42
9000
只做原装,假一罚十,公司可开17%增值税发票!
NEC
25+
QFP
54648
百分百原装现货 实单必成 欢迎询价
NEC
24+
QFP
990000
明嘉莱只做原装正品现货
NEC
24+
DIP40
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
NEC
23+
SOP
4500
全新原装、诚信经营、公司现货销售!
NEC
24+
DIP42
35
只做原厂渠道 可追溯货源
NEC
22+
SSOP
34450
原装正品现货,可开13个点税
NEC
24+
QFP
3000
自己现货
原厂正品
23+
PLCC-32
5000
原装正品,假一罚十

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