型号 功能描述 生产厂家&企业 LOGO 操作
UPD444016

4M-BITCMOSFASTSRAM256K-WORDBY16-BIT

文件:101.78 Kbytes Page:6 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+5.0Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSINTEGRATEDCIRCUIT

Features •262,144wordsby16bitsorganization •Fastaccesstime:8,10,12ns(MAX.) •Bytedatacontrol:/LB(I/O1-I/O8),/UB(I/O9-I/O16) •OutputEnableinputforeasyapplication •Single+3.3Vpowersupply

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

4M-BITCMOSFASTSRAM256K-WORDBY16-BIT

文件:101.78 Kbytes Page:6 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BITEXTENDEDTEMPERATUREOPERATION

文件:86.57 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BIT

文件:101.78 Kbytes Page:6 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BITEXTENDEDTEMPERATUREOPERATION

文件:86.57 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BIT

文件:101.78 Kbytes Page:6 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BITEXTENDEDTEMPERATUREOPERATION

文件:86.57 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BIT

文件:102.89 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BIT

文件:101.78 Kbytes Page:6 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BIT

文件:101.78 Kbytes Page:6 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BIT

文件:101.78 Kbytes Page:6 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BIT

文件:102.89 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BITEXTENDEDTEMPERATUREOPERATION

文件:87.4 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BIT

文件:102.89 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BITEXTENDEDTEMPERATUREOPERATION

文件:87.4 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BIT

文件:102.89 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BITEXTENDEDTEMPERATUREOPERATION

文件:87.4 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BIT

文件:102.89 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BIT

文件:102.89 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BIT

文件:102.89 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BITEXTENDEDTEMPERATUREOPERATION

文件:87.4 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

4M-BITCMOSFASTSRAM256K-WORDBY16-BITEXTENDEDTEMPERATUREOPERATION

文件:86.57 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

UPD444016产品属性

  • 类型

    描述

  • 型号

    UPD444016

  • 制造商

    Renesas Electronics

  • 功能描述

    10ns

  • 制造商

    Renesas Electronics

  • 功能描述

    10ns Cut Tape

更新时间:2024-3-29 12:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
23+
TSOP44
8560
受权代理!全新原装现货特价热卖!
NEC
TSOP
125000
一级代理原装正品,价格优势,长期供应!
23+
N/A
49300
正品授权货源可靠
NEC
23+
NA/
3710
原厂直销,现货供应,账期支持!
NEC
51
公司优势库存 热卖中!
NET
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
NEC
22+
TSOP44
12245
现货,原厂原装假一罚十!
NEC
2020+
TSSOP
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
NEC
20+
TSSOP
2960
诚信交易大量库存现货
NEC
22+
TSOP
6550
绝对原装公司现货!

UPD444016芯片相关品牌

  • 3M
  • AVX
  • GSI
  • MA-COM
  • MARL
  • MORNSUN
  • PAIRUI
  • PCA
  • PF
  • RENESAS
  • TTELEC
  • XFMRS

UPD444016数据表相关新闻

  • UPD720201K8-701-BAC-A-艾飞琪电子-只做原装原厂渠道-原厂代理

    UPD720201K8-701-BAC-A-艾飞琪电子-只做原装原厂渠道-原厂代理

    2022-4-2
  • UPD30181AYF1-131-GA3-A 瑞智芯 只有原装

    深圳市瑞智芯科技有限公司 联系人:彭先生 QQ:2851196982 直线:0755-82991809 手机:13787628849 邮箱:pc@szruizhixin.com 地址:深圳市福田区中航路42号中航北苑大厦A座6A2 型号:UPD30181AYF1-131-GA3-A 品牌:Renesas 包装:50 封装:BGA240

    2021-9-3
  • UPD720114GA-YEU-AT

    UPD720114GA-YEU-AT,当天发货0755-82732291全新原装现货或门市自取.

    2020-11-22
  • UPD720114GA-9EU-A

    UPD720114GA-9EU-A,当天发货0755-82732291全新原装现货或门市自取.

    2020-11-22
  • UPD16818GR-8JG-步进电机控制器/驱动器

    描述该mPD16818是单片双H桥驱动器集成电路,它使用其输出级N沟道功率MOS场效应管。通过雇用输出级的功率MOS场效应晶体管,该驱动电路的电压和饱和度大幅提高功耗比传统的驱动电路,使用双极晶体管。此外,驱动电流可以调节,在节电模式下使用外部电阻器。因此,该mPD16818作为一个两相励磁驱动电路的理想,双极步进电机驱动头执行器的一个FDD。特征•兼容电源电压3V-/5V-•引脚兼容与mPD16803•低(顶部和底部的ON电阻马鞍山FET的总和)ON电阻R

    2013-2-5
  • UPD16813-整体式双H桥驱动器电路

    描述该mPD16813是单片双H桥驱动电路,在它的驱动级功率MOS场效应管。通过补充P通道和N通道的输出级,电路电流大幅inproved相对于传统电荷泵驱动程序。该mPD16813因此作为2相励磁驱动电路的理想,双极步进电机驱动头部的一个FDD驱动器。特征•低(顶部和底部的ON电阻晶体管的总和)ON电阻RON的典型值=2.0瓦特。•低电流消耗:国际直拨电话=100mA最大。•降噪电路,操作时INC已关闭。•小型表面贴装封装:16引脚SOP的塑

    2013-2-5