MOS INTEGRATED CIRCUIT

FEATURES • High voltage full CMOS process • High breakdown voltage, high current output (Maximum rating: 120 V, +400 mA, −150 mA) • 64-bit bi-directional shift register on chip • Data control by transfer clock (external) and latch • High-speed data transfer capability (fCLK = 12 MHz MAX.: whe

64-BIT AC-PDP DRIVER

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64-BIT AC-PDP DRIVER

MOS INTEGRATED CIRCUIT

FEATURES • High voltage full CMOS process • High breakdown voltage, high current output (Maximum rating: 120 V, +400 mA, −150 mA) • 64-bit bi-directional shift register on chip • Data control by transfer clock (external) and latch • High-speed data transfer capability (fCLK = 12 MHz MAX.: whe

2.5V/3.3V 1-to-4 address driver 3-State

DESCRIPTION The 74ALVT16344 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. It is designed for VCC operation at 2.5V or 3.3V with I/O compatibility to 5V. The 74ALVT16344 is a 1-to-4 address driver used in applications where

2.5V/3.3V 1-to-4 address driver 3-State

DESCRIPTION The 74ALVT16344 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. It is designed for VCC operation at 2.5V or 3.3V with I/O compatibility to 5V. The 74ALVT16344 is a 1-to-4 address driver used in applications where

Hook and Loop – Ties

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