FEATURES

• High voltage full CMOS process

• High breakdown voltage, high current output (Maximum rating: 120 V, +400 mA, −150 mA)

• 64-bit bi-directional shift register on chip

• Data control by transfer clock (external) and latch

• High-speed data transfer capability (fCLK = 12 MHz MAX.: when cascaded)

• Wider operating ambient temperature (TA = −40°C to 85°C)