NECs VARIABLE GAIN AMPLIFIER

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NECs VARIABLE GAIN AMPLIFIER

文件：720.1 Kbytes Page：4 Pages

封装/外壳：6-SMD，扁平引线 包装：散装 描述：IC AMP PHS 800MHZ-2.5GHZ 6-MINIM RF/IF，射频/中频和 RFID 射频放大器

包装：盒 描述：EVAL BOARD UPC8204TK 1.9GHZ 开发板，套件，编程器 射频评估和开发套件，开发板

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description The ACE8204TL uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 2.5V to 8V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description The ACE8204TL uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 2.5V to 8V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM8204 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. AM8204 is available in a SOT-26 package. FEATURES

SC & FC/PC3 Pull-Proof Fiber Optic Connectors

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4-Port DVI Broadcaster with Audio

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