SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 1.9 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 39 dB TYP. @ f = 1.0 GHz ISL = 40 dB TYP. @ f = 1.9 GHz ISL = 38 dB TYP. @ f = 2.4 GHz • Power gain : GP = 11.0 dB TYP. @ f = 1.0 GHz GP = 11.5 dB TYP. @

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 1.9 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 39 dB TYP. @ f = 1.0 GHz ISL = 40 dB TYP. @ f = 1.9 GHz ISL = 38 dB TYP. @ f = 2.4 GHz • Power gain : GP = 11.0 dB TYP. @ f = 1.0 GHz GP = 11.5 dB TYP. @

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 1.9 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 40 dB TYP. @ f = 1.0 GHz ISL = 41 dB TYP. @ f = 1.9 GHz ISL = 42 dB TYP. @ f = 2.4 GHz • Power gain : GP = 11.0 dB TYP. @ f = 1.0 GHz GP = 11.0 dB TYP. @

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 1.9 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 40 dB TYP. @ f = 1.0 GHz ISL = 41 dB TYP. @ f = 1.9 GHz ISL = 42 dB TYP. @ f = 2.4 GHz • Power gain : GP = 11.0 dB TYP. @ f = 1.0 GHz GP = 11.0 dB TYP. @

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 1.9 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 40 dB TYP. @ f = 1.0 GHz ISL = 41 dB TYP. @ f = 1.9 GHz ISL = 42 dB TYP. @ f = 2.4 GHz • Power gain : GP = 11.0 dB TYP. @ f = 1.0 GHz GP = 11.0 dB TYP. @

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件：1.63019 Mbytes Page：25 Pages

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：593.31 Kbytes Page：27 Pages

SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：206.02 Kbytes Page：7 Pages

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：165.67 Kbytes Page：28 Pages

SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：165.67 Kbytes Page：28 Pages

SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：206.02 Kbytes Page：7 Pages

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR） 描述：IC RF AMP GP 2.4GHZ 6SO RF/IF，射频/中频和 RFID 射频放大器

包装：盒 描述：EVAL BOARD FOR UPC8178 900MHZ 开发板，套件，编程器 射频评估和开发套件，开发板

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：308.43 Kbytes Page：27 Pages

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件：1.63019 Mbytes Page：25 Pages

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：593.31 Kbytes Page：27 Pages

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：308.43 Kbytes Page：27 Pages

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：308.43 Kbytes Page：27 Pages

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：593.31 Kbytes Page：27 Pages

RS232/422 Low Cap, #24-18pr, FPO, Indiv.& O/A FoilsBraid, PVC Jkt, CM,100Ω

Product Description Computer EIA RS-232/422, Digital Audio Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, 18 twisted pairs individually Beldfoil® shielded + overall 100 Beldfoil® + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

LOW-DROPOUT, 7.7 V PREREGULATOR

LOW-DROPOUT, 7.7 V PREREGULATOR Designed specifically to meet the stringent requirements of automotive applications, the A8178LLR and A8178LLT provide an output voltage of 7.7 V ±15 for supply voltages greater than 6.9 V. They also provide a low-dropout tracking output for supply voltages down to

8178D-HR Low-Profile, High Gain Antenna with High Rejection GNSS Technology

Features GPS L1, GLONASS G1, Galileo E1 and Beidou B1 frequencies Proprietary filtering design allows wideband coverage while achieving superior out-of-band rejection for all GNSS frequencies 40dB LNA gain Low noise figure

Plug-In Device Contacts

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Heyco짰 Plug-In Device Contacts

文件：258.94 Kbytes Page：1 Pages