High Slew Rate, Low Offset Voltage J-FET Input Operational Amplifier

FEATURES  Input Offset Voltage ±1 mV (TYP.) (±2.5 mV MAX.)  VIO Temperature Drift ±7 μV/C (TYP.)  Input Bias Current 50 pA (TYP.)  Slew Rate 25 V/μs (TYP.)  Unity Gain Frequency 6 MHz (TYP.)  Input Equivalent Noise Voltage Density 19 nV/ Hz (TYP.) (f = 1 kHz)  Stable operation again

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Recommended operating frequency: f = 800 MHz to 1.5 GHz • Low distortion : Padj £ –60 dBc MAX. @Pin = –15 dBm, Df = ±50 kHz, VCC = 3.0 V, TA = +25 °C • Supply voltage : VCC = 2.7 to 3.3 V • Low current consumption : ICC = 11 mA TYP. @VCC = 3.0 V • Gain control voltage : VAGC = 0 t

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

丝印代码：C2Q；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Recommended operating frequency: f = 800 MHz to 1.5 GHz • Low distortion : Padj £ –60 dBc MAX. @Pin = –15 dBm, Df = ±50 kHz, VCC = 3.0 V, TA = +25 °C • Supply voltage : VCC = 2.7 to 3.3 V • Low current consumption : ICC = 11 mA TYP. @VCC = 3.0 V • Gain control voltage : VAGC = 0 t

-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8130TA and µPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. These ICs are lower distortion than conventional µPC8119T

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8130TA and µPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. These ICs are lower distortion than conventional µPC8119T

丝印代码：C2R；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Recommended operating frequency: f = 800 MHz to 1.5 GHz • Low distortion : Padj £ –60 dBc MAX. @Pin = –15 dBm, Df = ±50 kHz, VCC = 3.0 V, TA = +25 °C • Supply voltage : VCC = 2.7 to 3.3 V • Low current consumption : ICC = 11 mA TYP. @VCC = 3.0 V • Gain control voltage : VAGC = 0 t

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low voltage operation, low current consumption VCC = 2.7 to 4.0 V, ICC = 32.5 mA at transmitter, ICC = 4.8 mA at receiver, 3.2 mA/@VCC = 3 V at 2nd VCO block • LPF is installed to suppress leakage of transmitter’s local (L01) harmonics. Spurious within transmission band (LO1 ´ 7, 8)

RF UP-CONVERTER WITH AGC FUNCTION IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8158K is a silicon microwave monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This MMIC consists of 0.8 GHz to 1.5 GHz up-converter and 100 MHz to 300 MHz quadrature modulator which are equipped with AGC and power save fun

UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESAT IIITM silicon bipolar process. The IC consists of a 1.8 - 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save func

900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8126K is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This IC integrates a pre-mixer for local signals plus a quadrature modulator operating from 889 MHz to 960 MHz. The chip which has been conventionally pac

Single Chip Transceiver Silicon MMIC for PHS

DESCRIPTION The µPC8139GR-7JH is a silicon microwave monolithic IC (SiMMIC) developed as a transceiver for Personal Handyphone System (PHS). This IC is a highly integrated single chip, suitable for PHS, including a quadrature modulator, up converter, and AGC circuit for adjusting the output leve

UP CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8129GR is a silicon monolithic integrated circuit designed as indirect quadrature modulator for digital mobile communication systems. This modulator consists of 0.8 GHz to 1.9 GHz up-converter and 100 MHz to 400 MHz quadrature modulator which are packaged in 20 pin SSOP. The de

Single Chip Transceiver Silicon MMIC for PHS

DESCRIPTION The µPC8139GR-7JH is a silicon microwave monolithic IC (SiMMIC) developed as a transceiver for Personal Handyphone System (PHS). This IC is a highly integrated single chip, suitable for PHS, including a quadrature modulator, up converter, and AGC circuit for adjusting the output leve

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low voltage operation, low current consumption VCC = 2.7 to 4.0 V, ICC = 32.5 mA at transmitter, ICC = 4.8 mA at receiver, 3.2 mA/@VCC = 3 V at 2nd VCO block • LPF is installed to suppress leakage of transmitter’s local (L01) harmonics. Spurious within transmission band (LO1 ´ 7, 8)

High Slew Rate, Low Offset Voltage J-FET Input Operational Amplifier

μPC813 is a high-speed version of μPC811. The J-FET input operational amplifier features a high-speed PNP transistor in the output stage for stable operation at a high slew rate of 25V/us with a gain of 1 (full feedback) The resistor-trimming method proven in other Renesas High-Precision Op-Amp and • Input Offset Voltage: ±1 mV (TYP.) (±2.5 mV MAX.)\n• VIO Temperature Drift: ±7 µV/°C (TYP.)\n• Input Bias Current: 50 pA (TYP.)\n• Slew Rate: 25 V/µs (TYP.)\n• Unity Gain Frequency: 6 MHz (TYP.)\n• Input Equivalent Noise Voltage Density: 19 nV√ Hz (TYP.) (f = 1 kHz)\n• Stable operation against cap;

High Slew Rate, Low Offset Voltage J-FET Input Operational Amplifier

FEATURES  Input Offset Voltage ±1 mV (TYP.) (±2.5 mV MAX.)  VIO Temperature Drift ±7 μV/C (TYP.)  Input Bias Current 50 pA (TYP.)  Slew Rate 25 V/μs (TYP.)  Unity Gain Frequency 6 MHz (TYP.)  Input Equivalent Noise Voltage Density 19 nV/ Hz (TYP.) (f = 1 kHz)  Stable operation again

功率场效应晶体管

General-purpose Linear-Operational Amplifiers (op-amp)

1.1-GHz Prescaler for PLLs in TV, CATV and SAT TV Tuners

Technology: Bipolar Features U813BS ECL output stage U813BSE emitter-follower output stage 3 scaling factors 64/128/256, programmable at Pin 5 High input sensitivity Low output impedance Low power consumption Pin-compatible to the U6xxB-series except Pin 5

1.1-GHz Prescaler for PLLs in TV, CATV and SAT TV Tuners

Technology: Bipolar Features U813BS ECL output stage U813BSE emitter-follower output stage 3 scaling factors 64/128/256, programmable at Pin 5 High input sensitivity Low output impedance Low power consumption Pin-compatible to the U6xxB-series except Pin 5

1.1-GHz Prescaler for PLLs in TV, CATV and SAT TV Tuners

Technology: Bipolar Features U813BS ECL output stage U813BSE emitter-follower output stage 3 scaling factors 64/128/256, programmable at Pin 5 High input sensitivity Low output impedance Low power consumption Pin-compatible to the U6xxB-series except Pin 5

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD µPA813T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f