WIDE BAND UHF SILICON MMIC AMPLIFIER

DESCRIPTION The UPC1651G is a silicon monolithic integrated circuit especially designed as a wide band amplifier covering the HF band through UHF band.

SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER

DESCRIPTION The µPC1652G is a silicon monolithic integrated circuit especially designed as a wide band amplifier convering HF band through UHF band. FEATURES • Excellent frequency response : 1 200 MHz TYP. @ 3 dB down • High power gain : 18 dB TYP. @ f = 500 MHz • Low voltage operation : VCC

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Excellent frequency response : 1 200 MHz TYP. @ 3 dB down • High power gain : 18 dB TYP. @ f = 500 MHz • Low voltage operation : VCC = 5 V • SOP package

1.0 GHz SILICON MMIC AMPLIFIER

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Excellent frequency response : 1 GHz TYP. @ 3 dB down • High power gain : 18 dB TYP. @ f = 500 MHz • Supply voltage : VCC = 5 V

850 MHz WIDE-BAND SILICON MMIC AMPLIFIER

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LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER

The µPC1658G is a silicon monolithic integrated circuit designed as amplifier for high frequency system applications. Bandwidth and output power level can be determined according to external resistor constants of negative feedback and final stage collector. This IC is available in 8-pin plastic SO

LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER

The µPC1658G is a silicon monolithic integrated circuit designed as amplifier for high frequency system applications. Bandwidth and output power level can be determined according to external resistor constants of negative feedback and final stage collector. This IC is available in 8-pin plastic SO

DC to VHF WIDEBAND DIFFERENTIAL INPUT AND OUTPUT AMPLIFIER IC

[NEC] SEMICONDUCTOR SELECTION GUIDE

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Bandwidth and typical gain : 120 MHz @ AVOL = 300 700 MHz @ AVOL = 10 • Phase delay : –85 deg. @ AVOL = 100, 100 MHz • Input Noise Voltage : 3 mVr.m.s. (RS = 50 W, 10 k to 10 MHz) • Supply Current : 13mA TYP. @ VCC ± = ±6 V • Gain adjustable from 10 to 300 with external resistor

BIPOLAR ANALOG INTEGRATED CIRCUITS

ULTRA-WIDEBAND DIFFERENTIAL VIDEO AMPLIFIER

ULTRA-WIDEBAND DIFFERENTIAL VIDEO AMPLIFIER

DESCRIPTION The µPC1663 is a differential input, differential output wideband amplifier IC that uses an high frequency silicon bipolar process. This process improves bandwidth phase characteristics, input noise voltage characteristics, and low power consumption when compared to conventional HF-

DC to VHF WIDEBAND DIFFERENTIAL INPUT AND OUTPUT AMPLIFIER IC

[NEC] SEMICONDUCTOR SELECTION GUIDE

ULTRA-WIDEBAND DIFFERENTIAL VIDEO AMPLIFIER

DESCRIPTION The µPC1663 is a differential input, differential output wideband amplifier IC that uses an high frequency silicon bipolar process. This process improves bandwidth phase characteristics, input noise voltage characteristics, and low power consumption when compared to conventional HF-

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Bandwidth and typical gain : 120 MHz @ AVOL = 300 700 MHz @ AVOL = 10 • Phase delay : –85 deg. @ AVOL = 100, 100 MHz • Input Noise Voltage : 3 mVr.m.s. (RS = 50 W, 10 k to 10 MHz) • Supply Current : 13mA TYP. @ VCC ± = ±6 V • Gain adjustable from 10 to 300 with external resistor

DC to VHF WIDEBAND DIFFERENTIAL INPUT AND OUTPUT AMPLIFIER IC

[NEC] SEMICONDUCTOR SELECTION GUIDE

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Bandwidth and typical gain : 120 MHz @ AVOL = 300 700 MHz @ AVOL = 10 • Phase delay : –85 deg. @ AVOL = 100, 100 MHz • Input Noise Voltage : 3 mVr.m.s. (RS = 50 W, 10 k to 10 MHz) • Supply Current : 13mA TYP. @ VCC ± = ±6 V • Gain adjustable from 10 to 300 with external resistor

GENERAL PURPOSE WIDE BNAD AMPLIFIER

DESCRIPTION The µPC1675G is a silicon monolithic integrated circuit employing small package (4pins mini mold) and designed for use as a wide bnad amplifier convers from HF band to UHF band. FEATURES • Excellent frequency response : 1.9GHz TYP. @ 3dB down below flat gain. • High isolation.

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Excellent frequency response : 1.9 GHz TYP. @ 3 dB down below flat gain. • High isolation. • Super small package. • Uni- and low voltage operation : VCC = 5 V • Input and output matching 50 W.

1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER

DESCRIPTION The UPC1676 is a silicon monolithic integrated circuit designed for wide-band amplifiers covering the VHF to UHF bands. The series is available in two package styles: a surface mount package (UPC1676G), and an 8 lead ceramic flat package (UPC1676B). Also available in chip form (UPC1

GENERAL PURPOSE WIDE BNAD AMPLIFIER

DESCRIPTION The UPC1676 is a silicon monolithic integrated circuit designed for wide-band amplifiers covering the VHF to UHF bands. The series is available in two package styles: a surface mount package (UPC1676G), and an 8 lead ceramic flat package (UPC1676B). Also available in chip form (UPC1

1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER

DESCRIPTION The UPC1676 is a silicon monolithic integrated circuit designed for wide-band amplifiers covering the VHF to UHF bands. The series is available in two package styles: a surface mount package (UPC1676G), and an 8 lead ceramic flat package (UPC1676B). Also available in chip form (UPC1

1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER

DESCRIPTION The UPC1676 is a silicon monolithic integrated circuit designed for wide-band amplifiers covering the VHF to UHF bands. The series is available in two package styles: a surface mount package (UPC1676G), and an 8 lead ceramic flat package (UPC1676B). Also available in chip form (UPC1

1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER

DESCRIPTION The UPC1676 is a silicon monolithic integrated circuit designed for wide-band amplifiers covering the VHF to UHF bands. The series is available in two package styles: a surface mount package (UPC1676G), and an 8 lead ceramic flat package (UPC1676B). Also available in chip form (UPC1

GENERAL PURPOSE WIDE BNAD AMPLIFIER

DESCRIPTION The UPC1676 is a silicon monolithic integrated circuit designed for wide-band amplifiers covering the VHF to UHF bands. The series is available in two package styles: a surface mount package (UPC1676G), and an 8 lead ceramic flat package (UPC1676B). Also available in chip form (UPC1

1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER

DESCRIPTION The UPC1676 is a silicon monolithic integrated circuit designed for wide-band amplifiers covering the VHF to UHF bands. The series is available in two package styles: a surface mount package (UPC1676G), and an 8 lead ceramic flat package (UPC1676B). Also available in chip form (UPC1

1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER

DESCRIPTION The UPC1676 is a silicon monolithic integrated circuit designed for wide-band amplifiers covering the VHF to UHF bands. The series is available in two package styles: a surface mount package (UPC1676G), and an 8 lead ceramic flat package (UPC1676B). Also available in chip form (UPC1

1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

DESCRIPTION The UPC1677 is a silicon monolithic integrated circuit designed as a wide-band amplifier covering the HF to UHF bands. The device features high output power, 19.5 dBm typical, high gain, 24 dB typical and operates from a single 5 volt supply. The UPC1677 is available in an 8 lead ce

1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

DESCRIPTION The UPC1677 is a silicon monolithic integrated circuit designed as a wide-band amplifier covering the HF to UHF bands. The device features high output power, 19.5 dBm typical, high gain, 24 dB typical and operates from a single 5 volt supply. The UPC1677 is available in an 8 lead ce

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 4.5 to 5.5 V • Saturated output power : PO(sat) = +19.5 dBm TYP. @ f = 500 MHz • Wideband response : fu = 1.8 GHz TYP. @ 3dB bandwidth • Power gain : GP = 24 dB TYP. @ f = 500 MHz • Isolation : ISL = 34 dB TYP. @ f = 500 MHz

5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

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5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

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5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES · Supply voltage : VCC = 4.5 to 5.5 V · Saturated output power : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor · Wideband response : fu = 2.0 GHz TYP. @ 3 dB down below the gain at 0.1 GHz · Power gain : GP = 23 dB TYP. @ f = 500 MHz · Isolation : ISL = 35 dB TYP. @ f

2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES · Supply voltage : VCC = 4.5 to 5.5 V · Saturated output power : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor · Wideband response : fu = 2.0 GHz TYP. @ 3 dB down below the gain at 0.1 GHz · Power gain : GP = 23 dB TYP. @ f = 500 MHz · Isolation : ISL = 35 dB TYP. @ f

5 V-BIAS, 5.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter stage amplifier of L Band wireless communication systems. This IC i

5 V-BIAS, 5.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter stage amplifier of L Band wireless communication systems. This IC i

5 V-BIAS, 5.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter stage amplifier of L Band wireless communication systems. This IC i

5 V-BIAS, 5.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter stage amplifier of L Band wireless communication systems. This IC i

GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC

DESCRIPTION The µPC1685G is Silicon monolithic IC designed for UHF band receiver applications. This IC consists of double balanced mixer, local oscillator, IF amplifier, and voltage regulator. The package is 8-pin SOP suitable for high-density surface mount. FEATURES • UHF band operation • Go

GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC

DESCRIPTION The µPC1685G is Silicon monolithic IC designed for UHF band receiver applications. This IC consists of double balanced mixer, local oscillator, IF amplifier, and voltage regulator. The package is 8-pin SOP suitable for high-density surface mount. FEATURES • UHF band operation • Go

GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC

DESCRIPTION The µPC1686 is Silicon monolithic IC designed for VHF band receiver applications. This IC consists of double balanced mixer, local oscillator, IF amplifier, and voltage regulator. The package is 8-pin SOP or SSOP suitable for high-density surface mount. FEATURES • VHF/CATV band ope

GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC

DESCRIPTION The µPC1686 is Silicon monolithic IC designed for VHF band receiver applications. This IC consists of double balanced mixer, local oscillator, IF amplifier, and voltage regulator. The package is 8-pin SOP or SSOP suitable for high-density surface mount. FEATURES • VHF/CATV band ope

GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC

DESCRIPTION The µPC1686 is Silicon monolithic IC designed for VHF band receiver applications. This IC consists of double balanced mixer, local oscillator, IF amplifier, and voltage regulator. The package is 8-pin SOP or SSOP suitable for high-density surface mount. FEATURES • VHF/CATV band ope

GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC

DESCRIPTION The µPC1686 is Silicon monolithic IC designed for VHF band receiver applications. This IC consists of double balanced mixer, local oscillator, IF amplifier, and voltage regulator. The package is 8-pin SOP or SSOP suitable for high-density surface mount. FEATURES • VHF/CATV band ope

GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC

DESCRIPTION The µPC1686 is Silicon monolithic IC designed for VHF band receiver applications. This IC consists of double balanced mixer, local oscillator, IF amplifier, and voltage regulator. The package is 8-pin SOP or SSOP suitable for high-density surface mount. FEATURES • VHF/CATV band ope

GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC

DESCRIPTION The µPC1687 is Silicon monolithic IC designed for UHF band receiver applications. This IC consists of double balanced mixer, local oscillator, IF amplifier, and voltage regulator. The package is 8-pin SOP or SSOP suitable for high-density surface mount. FEATURES • UHF band operatio

GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC

DESCRIPTION The µPC1687 is Silicon monolithic IC designed for UHF band receiver applications. This IC consists of double balanced mixer, local oscillator, IF amplifier, and voltage regulator. The package is 8-pin SOP or SSOP suitable for high-density surface mount. FEATURES • UHF band operatio

GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC

DESCRIPTION The µPC1687 is Silicon monolithic IC designed for UHF band receiver applications. This IC consists of double balanced mixer, local oscillator, IF amplifier, and voltage regulator. The package is 8-pin SOP or SSOP suitable for high-density surface mount. FEATURES • UHF band operatio

GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC

DESCRIPTION The µPC1687 is Silicon monolithic IC designed for UHF band receiver applications. This IC consists of double balanced mixer, local oscillator, IF amplifier, and voltage regulator. The package is 8-pin SOP or SSOP suitable for high-density surface mount. FEATURES • UHF band operatio

GENERAL PURPOSE 5 V FREQUENCY DOWN-CONVERTER IC

DESCRIPTION The µPC1687 is Silicon monolithic IC designed for UHF band receiver applications. This IC consists of double balanced mixer, local oscillator, IF amplifier, and voltage regulator. The package is 8-pin SOP or SSOP suitable for high-density surface mount. FEATURES • UHF band operatio

NECs 1.0 GHz BANDWIDTH SILICON MMIC AMPLIFIER

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BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Flat gain: DGP = ±1 dBTYP. @ f = 0.1 to 0.7 GHz • Frequency response : 1.1 GHzTYP. @ 3dB band width • Power gain : 21 dBTYP. @ 0.5 GHz • Supply voltage : 5 V ± 0.5 V • 4 pin mini mold package

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Flat gain: DGP = ±1 dBTYP. @ f = 0.1 to 0.7 GHz • Frequency response : 1.1 GHzTYP. @ 3dB band width • Power gain : 21 dBTYP. @ 0.5 GHz • Supply voltage : 5 V ± 0.5 V • 4 pin mini mold package

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Flat gain: DGP = ±1 dBTYP. @ f = 0.1 to 0.7 GHz • Frequency response : 1.1 GHzTYP. @ 3dB band width • Power gain : 21 dBTYP. @ 0.5 GHz • Supply voltage : 5 V ± 0.5 V • 4 pin mini mold package

Micropower Low Dropout Regulators with Shutdown

DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS