5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

5 V-BIAS, +17.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION\nThe µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC is • Supply voltage : VCC = 4.5 to 5.5 V\n• Saturated output power : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor\n• Wideband response : fu = 2.0 GHz TYP. @ 3 dB bandwidth\n• Power gain : GP = 23 dB TYP. @ f = 500 MHz\n• Isolation : ISL = 35 dB TYP. @ f = 500 MHz;

5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER

DESCRIPTION The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC

2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

DESCRIPTION\nNEC's UPC1678GV is a silicon monolithic integrated circuit designed as a wide-band amplifier covering the HF to UHF bands. The device features high output power, 18 dBm TYP, high gain, 23 dB TYP and operates from a single 5 volt supply.FEATURES\n• HIGH OUTPUT POWER: +18 dBm PSAT\n• EXCE • HIGH OUTPUT POWER: +18 dBm PSAT\n• EXCELLENT FREQUENCY RESPONSE:  2.0 GHz TYP at 3 dB Down\n• HIGH POWER GAIN: 23 dB TYP at 500 MHz\n• SINGLE SUPPLY VOLTAGE: 5 V\n• AVAILABLE IN TAPE AND REEL ;

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES · Supply voltage : VCC = 4.5 to 5.5 V · Saturated output power : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor · Wideband response : fu = 2.0 GHz TYP. @ 3 dB down below the gain at 0.1 GHz · Power gain : GP = 23 dB TYP. @ f = 500 MHz · Isolation : ISL = 35 dB TYP. @ f

丝印代码：1678；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES · Supply voltage : VCC = 4.5 to 5.5 V · Saturated output power : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor · Wideband response : fu = 2.0 GHz TYP. @ 3 dB down below the gain at 0.1 GHz · Power gain : GP = 23 dB TYP. @ f = 500 MHz · Isolation : ISL = 35 dB TYP. @ f

2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

文件：340.64 Kbytes Page：7 Pages

2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

文件：340.64 Kbytes Page：7 Pages

封装/外壳：8-LSSOP（0.126"，3.20mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF AMP UHF 1.7GHZ-2GHZ 8SO RF/IF，射频/中频和 RFID 射频放大器

封装/外壳：8-LSSOP（0.126"，3.20mm 宽） 包装：卷带（TR） 描述：IC RF AMP UHF 1.7GHZ-2GHZ 8SO RF/IF，射频/中频和 RFID 射频放大器

1-Cell to 2-Cell, Low-Noise, High-Efficiency, Step-Up DC-DC Converter

General Description The MAX1678 is a high-efficiency, low-voltage, synchronous-rectified, step-up DC-DC converter intended for use in devices powered by 1 to 3-cell alkaline, NiMH, or NiCd batteries or a 1-cell lithium battery. It guarantees a 0.87V start-up voltage and features a low 37µA quiesc

Integrated Circuit Switching Regulator for TV

Description: The NTE1687 is a switching regulator integrated circuit in a 14–Lead DIP type package especially designed for TV sets. This device can be used for both types of TV sets, insulated type and non–insu lated types. The NTE1687 operates in synchronizing with the horizontal retrace pu