NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The UPA839TF contains one NE680 and one NE856 NPN high frequency silicon bipolar chip. NECs new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily con

NPN SILICON EPITAXIAL TWIN TRANSISTOR

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The UPA839TF contains one NE680 and one NE856 NPN high frequency silicon bipolar chip. NECs new low profile TF package is ideal for all portable wireless applications where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily con

Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

0.35 ohm CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX

GENERAL DESCRIPTION The ADG839 isa low voltage CMOS device containing a single pole, double-throw(SPDT) switch. This device offers ultralow onresistanceoflessthan0.6 Ω over the fulltemperature range. The ADG839 isfully specified for 1.8 V,2.5 V,and 3.3 V supply operation. FEATURES 1.65

0.35 ohm CMOS 1.65 V to 3.6 V Single SPDT Switch/2:1 MUX

GENERAL DESCRIPTION The ADG839 isa low voltage CMOS device containing a single pole, double-throw(SPDT) switch. This device offers ultralow onresistanceoflessthan0.6 Ω over the fulltemperature range. The ADG839 isfully specified for 1.8 V,2.5 V,and 3.3 V supply operation. FEATURES 1.65

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) • High DC Current Gain • Low Saturation Voltage • Complement to Type BD840 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in television circu

Novel Current-Sense Measurement with Automatic Offset Correction

文件：131.1 Kbytes Page：5 Pages