SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. FEATURES • Super low on-state resistance RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID =

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. FEATURES · Super low on-state resistance RDS(on)1 = 19.0 mW TYP. (VGS = 10 V, ID = 4.0

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. FEATURES · Super low on-state resistance RDS(on)1 = 19.0 mW TYP. (VGS = 10 V, ID = 4.0

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. FEATURES • Super low on-state resistance RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID =

Integrated Circuit VCR Hall Switch

Description: This device operates with a small permanent magnet and provides switching operation by increasing or decreasing the magnetic flux density. The device features operation on alternate magnetic field and a wide range of operating temperature.

1.5/1.9GHz BAND FRONT-END GaAs MMIC

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High Speed Power Driver

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