SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. FEATURES • Super low on-state resistance RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID =

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. FEATURES · Super low on-state resistance RDS(on)1 = 19.0 mW TYP. (VGS = 10 V, ID = 4.0

Customer Specification

Construction Diameters (In) 1) Component 1 1 X 1 COND a) Conductor 24 (10/34) AWG Tinned Copper 0.024 b) Insulation 0.016 Wall, Nom. Polyethylene(PE) 0.056 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 2) Shield Tinned Copper SPIRAL Shield,90 Coverage, Min. 3) Jacket 0.020 Wall,

T-1 Subminiature Lamps

T-1¾ Wire Lead T-1¾ Miniature Flanged T-1¾ Miniature Grooved T-1¾ Midget Screw T-1¾ Bi-Pin

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Features ■ Self-healing properties ■ Low dissipation factor ■ High insulation resisitance Construction ■ Dielectric: polypropylene film ■ Aluminium can ■ Soft polyurethan resin ■ Internal dischage resistor ■ Overpressure disconnector Typical applications For general sine wave applicat

Shorty Plugs

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AM1705 ARM Microprocessor

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