SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor

designed for DC/DC Converters and power management

application of notebook computers.

FEATURES

· Super low on-state resistance

RDS(on)1 = 19.0 mW TYP. (VGS = 10 V, ID = 4.0 A)

RDS(on)2 = 30.0 mW TYP. (VGS = 4.5 V, ID = 4.0 A)

· Low Ciss : Ciss = 750 pF TYP.

· Built-in G-S protection diode

· Small and surface mount package (Power SOP8)