ISOLATION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 8.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 8.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency.

ISOLATION ULTRAFAST SWITCHING RECTIFIERS

VOLTAGE RANGE -50 TO 800 VOLTS CURRENT -8.0 Amperes FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. Exceeds environmental standards of MILS-19500/228. Low power loss, high efficiency

8.0A ISOLATION ULTRAFAST GLASS PASSIVATED RECTIFIER

Features Glass Passivated Die Construction Ultra-Fast Switching Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Plastic Material has UL Flammability Classification 94V-O Mechanical Data Case: ITO-220A, Full Molded Plastic Terminals: P

ULTRAFAST SWITCHING RECTIFIERS VOLTAGE- 50 to 1000 Volts CURRENT - 8.0 Ampere

VOLTAGE- 50 to 1000 Volts CURRENT - 8.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency

SURFACE MOUNT REVERSE voltage

SURFACE MOUNT REVERSE SUPERFAST RECOVERY RECTIFI VOLTAGE 50 TOER 1000VOLTS FEATURES ‧Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ‧Exceeds environmental standards of MIL-S-19500/228 ‧Low pow

8.0A GLASS PASSIVATED ULTRAFAST RECTIFIER

Glass Passivated Die Construction Ultrafast 50nS and 100nS Recovery Time Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

ISOLATION ULTRAFAST RECOCVEY RECTIFIERS

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8.0A GLASS PASSIVATED ULTRAFAST RECTIFIER

文件：49.58 Kbytes Page：4 Pages

ULTRAFAST RECOCVEY RECTIFIERS

文件：105.84 Kbytes Page：2 Pages

超快速恢复整流器

8.0A GLASS PASSIVATED ULTRAFAST RECTIFIER

Glass Passivated Die Construction Ultrafast 50nS and 100nS Recovery Time Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

ISOLATION ULTRAFAST RECOCVEY RECTIFIERS

文件：430.92 Kbytes Page：2 Pages

8.0A GLASS PASSIVATED ULTRAFAST RECTIFIER

文件：49.58 Kbytes Page：4 Pages

ULTRAFAST RECOCVEY RECTIFIERS

文件：105.84 Kbytes Page：2 Pages

封装/外壳：TO-220-2 全封装，隔离接片 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ULTRA FAST RECOVERY RECTIFIERS 分立半导体产品 二极管 - 整流器 - 单

二极管

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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