RF MOSFET Power Transistor, lOOW, 28V 100 - 500 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

RF MOSFET Power Transistor, 100W, 28V 100 - 500 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

3.0A SUPER-FAST GLASS BODY RECTIFIER

Features • Hermetically Sealed Glass Body Construction • Controlled Avalanche Characteristics • Super-Fast Switching for High Efficiency • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 90A Peak • Low Reverse Leakage Current

Other AC and DC Meters Available

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BODY - BRASS, NICKEL PLATING CONTACT - BRASS, SILVER PLATING

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