RF MOSFET Power Transistor, lOOW, 28V 100 - 500 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

RF MOSFET Power Transistor, 100W, 28V 100 - 500 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

RF Power MOSFET Transistor 100W, 100-500 MHz, 28V

Features • N-channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than competitive devices • RoHS Compliant

DMOS

·N-Channel Enhancement Mode Device\n·RoHS Compliant\n·Lower Noise Figure than Competitive Devices\n·High Saturated Output Power\n·Lower Capacitances for Broadband Operation\n·DMOS Structure;

RF Power MOSFET Transistor 100W, 100-500 MHz, 28V

·N-Channel Enhancement Mode Device\n·RoHS Compliant\n·Lower Noise Figure than Competitive Devices\n·High Saturated Output Power\n·Lower Capacitances for Broadband Operation\n·DMOS Structure;

RF Power MOSFET Transistor 100W, 100-500 MHz, 28V

RF Power MOSFET Transistor 100W, 100-500 MHz, 28V Features • N-channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than competitive devices • RoHS Compliant

RF MOSFET Power Transistor, lOOW, 28V 100 - 500 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

RF MOSFET Power Transistor, 15W, 28V 100-500MHz

Features • N-Channel Enhancement &lode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Competitive Devices

RF Power MOSFET Transistor 100W, 100-500 MHz, 28V

Features • N-channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than competitive devices

RF Power MOSFET Transistor 100W, 100-500 MHz, 28V

·N-channel Enhancement Mode Device\n·High Saturated Output Power\n·Lower Capacitances for Broadband Operation • High saturated output power • Lower noise figure than competitive devices\n·DMOS Structure\n·Lower Noise Figure than Competitive Devices;

RF Power MOSFET Transistor

文件：235.96 Kbytes Page：3 Pages

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET 100W 28V 100-500MHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power MOSFET Transistor

文件：235.96 Kbytes Page：3 Pages

RF Power MOSFET Transistor

文件：661.73 Kbytes Page：4 Pages

RF Power MOSFET Transistor

文件：235.57 Kbytes Page：3 Pages

RF Power MOSFET Transistor

文件：235.57 Kbytes Page：3 Pages

RF Power MOSFET Transistor

文件：660.97 Kbytes Page：4 Pages

RF Power MOSFET Transistor

文件：224.2 Kbytes Page：3 Pages

RF Power MOSFET Transistor

文件：224.2 Kbytes Page：3 Pages

RF Power MOSFET Transistor

文件：648.08 Kbytes Page：4 Pages

3.0A SUPER-FAST GLASS BODY RECTIFIER

Features • Hermetically Sealed Glass Body Construction • Controlled Avalanche Characteristics • Super-Fast Switching for High Efficiency • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 90A Peak • Low Reverse Leakage Current