CURRENT 2.0 Amperes VOLTAGE 50 to 1000 Volts

Features · Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · Low forward voltage drop · High current capability · High reliability · Low power loss, high effciency · High surge current capability · High speed switching · Low leakage

Ultra fast switching for high efficiency

Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Ultra fast switching for high efficiency ● Low reverse leakage ● High forward surge current capability ● High temperature solderi

ULTRA FAST RECOVERY SILICON RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Ampere FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Ultra fast switching for high efficiency ● Low reverse leakage ● High forward surge current capability ● High temperature solderi

Ultra Fast Recovery Rectifier

[YENYO] Features ◆ Low forward voltage drop ◆ Fast switching for high efficiency ◆ High current capability ◆ High surge current capability ◆ Low reverse leakge current

2.0AMPS. SILICON ULTRA FAST RECTIFIERS

FEATURE .Low leakage .Low forward voltage drop .High current capability .High surge capability .High reliability .High temperature soldering guaranteed 260°C /10sec / 0.375 lead length at 5 lbs tension

2.0AMPS. SILICON ULTRA FAST RECTIFIERS

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ULTRA FAST RECOVERY SILICON RECTIFIER

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Diode Rectifier

超快恢复整流管

2.0A GLASS PASSIVATED ULTRAFAST DIODE

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Glass Passivated Ultra Fast Recovery Rectifier

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2.0AMPS. GLASS PASSIVATED ULTRA FAST RECTIFIERS

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P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.