Dual N-channel TrenchMOS logic level FET

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

Dual N-channel TrenchMOS logic level FET

1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits

102/103, 202/203, 302/303 Flanged Diaphragm Seal

FEATURES 316L stainless steel top housing (standard) A thin PTFE gasket between the diaphragm/bottom housing ensures a leak-tight, corrosion resistant seal Continuous duty design prevents loss of process fluid if pressure instrument is removed or fails Modular design allows for a suitable

Surface Mount Fuses - Subminiature Surface Mount & Dip Types

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M12-A Female 5 Pin Field Attachable

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BLACK COLOR NI/CU POLYESTER TAFFETA FABRIC-OVER-FOAM

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Masking Tape

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