SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

PSR原边(Bipolar)系列

RF POWER VDMOS TRANSISTOR

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Dual N-Channel Enhancement Mode Field Effect Transistor

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低正向压降肖特基整流器

低正向压降肖特基整流器

102/103, 202/203, 302/303 Flanged Diaphragm Seal

FEATURES 316L stainless steel top housing (standard) A thin PTFE gasket between the diaphragm/bottom housing ensures a leak-tight, corrosion resistant seal Continuous duty design prevents loss of process fluid if pressure instrument is removed or fails Modular design allows for a suitable

Surface Mount Fuses - Subminiature Surface Mount & Dip Types

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M12-A Female 5 Pin Field Attachable

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BLACK COLOR NI/CU POLYESTER TAFFETA FABRIC-OVER-FOAM

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Masking Tape

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