RECTIFIERS

DUCRIPTION This Series is specifically designed for operation in power switching circuits operating at frequencies of at least 20KHz. The very low forward voltage and very fast recovery time make them particularly suited for switching type power supplies. FEATURE • High Continuous Current Ratin

High Efficiency, 50A and 70A

DUCRIPTION This Series is specifically designed for operation in power switching circuits operating at frequencies of at least 20KHz. The very low forward voltage and very fast recovery time make them particularly suited for switching type power supplies. FEATURE • High Continuous Current Ratin

Rectifier Diode Switching 2-Pin 70A, 100V, 50ns DO-5 Tray

This series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz. The very low forward voltage and very fast recovery time make them particulary suited for switching type power supplies. High continuos current rating \n Very low forward voltage \n Very fast switching speeds \n High surge capacity \n Low thermal resistance \n Mechanically rugged DO-5 package;

封装/外壳：DO-203AB，DO-5，接线柱 包装：散装 描述：RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

Diode Switching 100V 70A 2-Pin DO-5

封装/外壳：DO-203AB，DO-5，接线柱 包装：卷带（TR） 描述：RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

Ultra Fast Rectifier (trr less than 100ns)

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat