Microwave Power Silicon NPN Transistor Microwave Power Silicon NPN Transistor

Description and Applications Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. Features • Guaranteed performance @ 960-1215MHz, 36Vdc • Output power: 30W peak • Minimum gain: 9.0dB min., 9.5dB typ. • 100 tested for load mi

MICROWAVE POWER TRANSISTOR

Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) • 100 Tested for Load Mismatch at All Phase Angles with

Nylon PCB Supports - Imperial Spacing

文件：111.86 Kbytes Page：1 Pages

Optical Components for Optical Measurement

文件：1.85753 Mbytes Page：28 Pages

Programmable Controllers

文件：2.48039 Mbytes Page：24 Pages