MOS Gate Drive Applications

Switching Applications

• Small footprint due to a small and thin package

• High DC current gain : PNP hFE = 200 to 500 (IC =－0.2 A)

: NPN hFE = 200 to 500 (IC = 0.2 A)

• Low collector-emitter saturation : PNP VCE (sat) =－ 0.20 V (max)

: NPN VCE (sat) = 0.14 V (max)

• High-speed switching : PNP tf = 40 ns (typ.)

: NPN tf = 45 ns (typ.)