MOS Gate Drive Applications

Switching Applications

• Small footprint due to a small and thin package

• High DC current gain : hFE = 200 to 500 (IC = −0.12 A)

• Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max)

: NPN VCE (sat) = 0.17 V (max)

• High-speed switching : PNP tf = 45 ns (typ.)

: NPN tf = 50 ns (typ.)