High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • SMT IRED with extra high radiant power • Low forward voltage • Compatible with automatic placement equipment • EIA and ICE standard package • Suitable

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant power at wavelength of 870 nm. Features • High radiant power • High speed tr = 30 ns • High modulation b

High Speed Infrared Emitting Diode, 890 nm RoHS Compliant, Released for Lead (Pb)-free Solder Process

文件：142.5 Kbytes Page：8 Pages

High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero

文件：136.48 Kbytes Page：6 Pages

High Speed Infrared Emitting Diode

文件：132.41 Kbytes Page：6 Pages