High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant power at wavelength of 870 nm. Features • High radiant power • High speed tr = 30 ns • High modulation b

High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

Description TSML3710 is an infrared emitting diode in GaAlAs on GaAs technology in miniature PLCC-2 SMD package. Features • SMT IRED with extra high radiant power • Low forward voltage • Compatible with automatic placement equipment • EIA and ICE standard package • Suitable

High Speed Infrared Emitting Diode

文件：132.41 Kbytes Page：6 Pages

High Speed Infrared Emitting Diode, 890 nm RoHS Compliant, Released for Lead (Pb)-free Solder Process

文件：142.5 Kbytes Page：8 Pages

High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero

文件：136.48 Kbytes Page：6 Pages